SUY50N03-07AP-T4 N沟道MOSFET 30V 2.5A TO-252/D-PAK marking/标记 50N0307 高速开关
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 2.5A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.007Ω/Ohm @20A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.2-1.5V |
耗散功率Pd Power Dissipation | 88W |
Description & Applications | Silicon Gate for Fast Switching Speeds • Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) 0.18 Ω max • The SOT–223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT3055ELT1 to order the 7 inch/1000 unit reel. Use MMFT3055ELT3 to order the 13 inch/4000 unit reel. |
描述与应用 | 硅栅快速开关速度 •低驱动要求接口电源负载到逻辑 级集成电路,VGS(TH)= 2伏特最大 •低的RDS(on) - 0.18Ω最大 •SOT-223包装可以使用波或回流焊接。所形成的线索在焊接热应力吸收,消除损害的可能性模具 •可在12毫米编带和轴 使用MMFT3055ELT1到责令7 inch/1000的单位卷轴。 使用MMFT3055ELT3责令13 inch/4000的单位卷轴 |
规格书PDF |