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EEPROMs-串行存储器 TC9WMB1FK US8 marking/标记 9WM

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产品描述
存储器格式Format - MemoryEEPROMs - 串行 EEPROMs - Serial
存储器类型Memory TypeEEPROM
存储容量Memory Size1K (128 x 8)
速度Speed
接口InterfaceI²C,2 线串口 I²C, 2-Wire Serial
电源电压Voltage - Supply
Description & ApplicationsTOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic 1,024-Bit (128 × 8 Bit) Serial E2PROM TC9WMB2FK: 2048-Bit (256 × 8 Bit) 2-Wire Serial E2PROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (E2PROM). Features 2-wire serial interface (I 2C BUSTM) (Note 1) Single power supply Read: VCC = 1.8 to 5.5 V Write: VCC = 2.3 to 5.5 V Low power consumption: 5 µA (in standby state) 0.5 mA (in read state) Operating frequency: 400 kHz (VCC = 2.3 to 5.5 V) Byte write and page (8-byte) write Write protection Sequential read Write time: 10 ms (VCC = 3.0 to 5.5 V) 2 ms (VCC = 2.3 to 2.7 V) Write endurance: 105 times Data retention: 10 years Wide operating temperature range: −40 to 85°C Package: US8 Note 1: I 2C BUS is a trademark of Royal Philips Electronics N.V.
描述与应用东芝CMOS数字集成电路硅单片 1024位(128×8位)串行E2PROM TC9WMB2FK:2048位(256×8位)2线串行E2PROM 的TC9WMA1FK是电可擦除/可编程 非易失性存储器(E2PROM) 2线串行接口(I 2C BUSTM)(注1) 单电源供电 阅读:VCC = 1.8至5.5 V 写:VCC= 2.3到5.5 V 低功耗:5μA(在待机状态) 0.5毫安(在读状态) 工作频率:400千赫(VCC= 2.3到5.5 V) (8个字节)字节写和页写 写保护 顺序读 发表时间:10毫秒(VCC=3.0至5.5 V) 2毫秒(VCC=2.3到2.7 V) 擦写次数:105次 数据保存:10年 宽工作温度范围:-40至85°C 包装:US8注1:我 2C总线是皇家飞利浦电子NV的商标
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