TM3055 N沟道MOSFET 60V 8A TO-252/TP-FA marking/标记 3055 高速开关
最大源漏极电压Vds Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 8A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.15Ω/Ohm @4A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.95-1.2V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | N- Channel Silicon MOS FET Very High-Speed Switching Features and Applications • Low ON-state resistance. • 4V drive. |
描述与应用 | N沟道硅MOS FET 非常高速开关 •低通态电阻。 •4V驱动器 |
规格书PDF |