TN0200T N沟道MOSFET 20V 730mA/0.73A SOT-23/SC-59 marking/标记 N0 高速开关/低导通电阻
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 730mA/0.73A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.4Ω/Ohm @600mA,4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.5-1.5 |
耗散功率Pd Power Dissipation | 350mW/0.35W |
Description & Applications | Low On-Resistance: 0.29 Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage |
描述与应用 | 低导通电阻:0.29? 低门槛:0.9 V(典型值) 2.5 V或更低的操作 开关速度快:22纳秒 低输入和输出泄漏 |
规格书PDF |