TPC6004 N沟道MOSFET 20V 6A SOT-163/SOT23-6/VS-6 marking/标记 S2C 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.024Ω/Ohm @3A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 2.2W |
| Description & Applications | Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) |
| 描述与应用 | 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RD（ON）= 19mΩ（典型值） •高正向转移导纳：| YFS|=11 S（典型值） •低漏电流IDSS= 10μA（最大）（VDS=20 V） •增强模式：VTH =0.5至1.2 V（VDS=10V，ID=200μA） |
| 规格书PDF |
