UMH6 NPN+NPN复合带阻尼三极管 50V 30mA R1=R2=47KΩ 150mW/0.15W SOT-363/UMT6/SC-88/SC70-6 标记H6 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 30mA |
Q1基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) | |
截止频率fT Transtion Frequency(fT) | 250MHz |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | Features •General purpose(dual digital transistors) •Two DTC144E chips in a EMT or UMT or SMT package. |
描述与应用 | 特点 •通用(双数字晶体管) •两个DTC144E的在EMT或UMT或SMT封装的芯片 |
规格书PDF |