VSS849TR N沟道MOSFET 16V 30mA SOT-143 marking/标记 49R 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 16V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 8-12V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Features Integrated gate protection diodes Low noise figure High gain Biasing network on chip Improved cross modulation at gain reduction High AGC-range SMD package |
| 描述与应用 | 综合栅极保护二极管 低噪声系数 高增益 偏置片上网络 改进的交叉调制增益降低 高AGC范围 SMD封装 |
| 规格书PDF |
