单向可控硅 X0202BN5BA4 0.8V 5mA SOT-223 marking/标记 X2B
| 反向重复峰值电压VRRM/断态重复峰值电压VDRMRepetitive peak reverse voltage/Repetitive peak off-state voltage | 600V-800V |
| 通态平均电流IT(AV)Average on-state current | 0.8A |
| 通态最大电流IT(RMS)RMS on-state current | 1.25A |
| 栅极触发电压VGTGate trigger voltage | 0.8V |
| 栅极触发电流IGTGate trigger current | 200μA |
| 保持电流IHHolding current | 5mA |
| 峰值通态电压VTMOn-state voltage | 1.45V |
| 重复峰值断态电流IDRMRepetitive peak off-state current | 5μA |
| 浪涌电流ITSM(50Hz、60Hz)Current - Non Rep. Surge 50, 60Hz (Itsm) | 25A |
| Description & Applications | Highly sensitive triggering levels for all applications where the available gate current is limited，such as： ground fault circuit interruptors, overvoltage crowbar protection in low power supplies,capacitive ignition circuits Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments |
| 描述与应用 | 高度敏感的触发水平 用于栅极电流被限制的应用程序，如：接地故障电路断续器，低功率电源的过压保护电路，电容式点火电路 通孔或表面贴装封装可行，这些器件的正向压降和浪涌电流能力经过优化，降低了功率损耗，在恶劣环境中有着高可靠性 |
| 规格书PDF |
