XN1871 N沟道结型场效应管 30v 0.5~1.2mA SOT-153 marking/标记 5T 低频放大
| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.5~1.2ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~-1.5v |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | •Silicon n-channel junction FET •For low-frequency amplification |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频放大 |
| 规格书PDF |
