XP0338900L(XP3389) NPN+PNP复合三极管 50V/-50V 100mA/-100mA 35/20 SOT-353/SC-88A 标记DX 用于开关/数字电路
Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
Q1集电极连续输出电流IC Collector Current(IC) | 100MA |
Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
Q2集电极连续输出电流IC Collector Current(IC) | -100MA |
Q1基极输入电阻R1 Input Resistance(R1) | 47 KΩ |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10 KΩ |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.47 |
直流电流增益hFE DC Current Gain(hFE) Q1/Q2 | 80 / 30 |
截止频率fT Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
耗散功率Pc Power Dissipation | 150MW |
Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
UN1213+UN111F
|
描述与应用 |
硅NPN型外延刨床晶体管(Tr1)
硅PNP型外延刨床晶体管(Tr2)
开关/数字电路
UN1213 + UN111F
|
规格书PDF |