XP132A11A1SR P沟道MOS场效应管 -30V -5A 0.055ohm SOT-23 marking/标记 2.1 超高速开关 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.055Ω @-3A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.5V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | Low on-state resistance : Rds (on) = 0.065Ω ( Vgs = -10V ) Rds (on) = 0.11Ω ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V High density mounting : SOP - 8 |
| 描述与应用 | 低通态电阻：RDS（ON）=0.065Ω（VGS=-10V） RDS（ON）=0.11Ω（VGS=-4.5V） 超高速开关 工作电压：4.5V 高密度安装：SOP - 8 |
| 规格书PDF |
