XP3389 NPN+PNP复合三极管 50V/-50V 100mA/-100mA 35/20 SOT-353/SC-88A 标记DX 用于开关/数字电路
| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| Q1集电极连续输出电流IC Collector Current(IC) | 100MA |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| Q2集电极连续输出电流IC Collector Current(IC) | -100MA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 0.51KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 5.1 KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.51 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 | 35 / 20 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
| 耗散功率Pc Power Dissipation | 150MW |
| Description & Applications |
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
UNR2211 + UNR2118
|
| 描述与应用 |
NPN型硅外延平面类型(Tr1)
PNP型硅外延平面类型(Tr2)
对数字电路
UNR2211 + UNR2118
|
| 规格书PDF |
