2SJ326-Z-E1 P沟道MOS场效应管 -60V 2A 0.28ohm SOT-252 marking/标记 J326 高速开关 工业用途
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.28Ω @-1A,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | MOS FIELD EFFECT POWER TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE low on-state resistance low Ciss built-in G-S gate protecion diode |
| 描述与应用 | MOS场效应功率晶体管 开关 P沟道功率MOS FET 工业用途 低通-态电阻 Ciss低 内置G-S门的法律保护二极管 |
| 规格书PDF |
