SSM3K16CT N沟道MOSFET 20V 100mA/0.1A CST3 marking/标记 SC
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.5Ω/Ohm @10A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | High-Speed Switching Applications Analog Switch Applications • Suitable for high-density mounting due to compact package • Low ON-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5V) : Ron = 15 Ω (max) (@VGS = 1.5 V) |
| 描述与应用 | 高速开关应用 模拟开关应用 •适用于高密度安装由于紧凑的封装 •低导通电阻：RON =3.0Ω（最大值）（@ VGS=4 V） RON =4.0Ω（最大值）（@ VGS= 2.5 V）罗恩=15Ω（最大）（@ VGS=1.5 V） |
| 规格书PDF |
