BSS87 N沟道MOSFET 240V 1.04A SOT-89 marking/标记 KA 高密度电池设计极低的RDS/压控制小信号开关
最大源漏极电压Vds Drain-Source Voltage | 240V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 1.04A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.9Ω/Ohm 260mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.2V |
耗散功率Pd Power Dissipation | 1A |
Description & Applications | SIPMOSSmall-Signal-Transistor N-Channel Enhancement mode, Logic Level dv/dt rated Pb-free lead plating; RoHS compliant |
描述与应用 | SIPMOS小信号晶体管 N沟道 增强模式,逻辑电平 dv / dt的额定 无铅引脚电镀,符合RoHS标准 |
规格书PDF |