SI5853DC 复合场效应管MOSFET+肖特基二极管 -20V -2.7A 1A 0.48V 1206-8/vs-8 marking/标记 JA
| 最大源漏极电压VdsDrain-Source Voltage | P沟道 P-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -8V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | -2.7A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 110mΩ@ VGS =-4.5V, ID =-2.7A |
| 耗散功率PdPower Dissipation | -0.45V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 20V |
| 规格书PDF |
