SI2307BDS P沟道MOS场效应管 0.061ohm SOT-23 marking/标记 L7 P沟道垂直DMOS
| 最大源漏极电压VdsDrain-Source Voltage | |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | |
| 最大漏极电流IdDrain Current | |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.061Ω @-3.2A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 2.1V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | P-Channel 30-V (D-S) MOSFET P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level 3 MOS |
| 描述与应用 | P沟道30-V（D-S）的MOSFET P沟道垂直DMOS 宏模型（子电路模型） 级别3 MOS |
| 规格书PDF |
