BSS138-7-f N沟道MOSFET 50V 200mA/0.2A SOT-23/SC-59 marking/标记 k38 额定雪崩/逻辑电平
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.5Ω/Ohm @220mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
| 描述与应用 | N沟道增强型场效应 晶体管 低导通电阻 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 |
| 规格书PDF |
