NTGS3443T1 P沟道MOS场效应管 -20V -2.2A 100毫欧 SOT-163 marking/标记 443 功率MOSFET 低导通电阻 便携式设备应用
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
最大漏极电流IdDrain Current | -2.2A/-0.2A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 100mΩ@ VGS = -2.5V, ID = -3.5A |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.6~-1.5V |
耗散功率PdPower Dissipation | 500mW/0.5W |
Description & Applications | Power MOSFET Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Miniature TSOP−6 Surface Mount Package • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards |
描述与应用 | 功率MOSFET 特点 •超低RDS(上) •更高的效率延长电池寿命 •微型TSOP-6表面贴装封装 •无铅包装是可用 应用 •电源管理在便携式和电池供电产品,即:蜂窝,无绳电话,PCMCIA卡 |
规格书PDF |