2SC6046 NPN三极管 75V 600mA/0.6a 250MHz 100~300 300mV/0.3V SOT-23/SC-59 marking/标记 BW 高电流驱动
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 75V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
截止频率fTTranstion Frequency(fT) | 250MHz |
直流电流增益hFEDC Current Gain(hFE) | 100~300 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率PcPower Dissipation | 200mW/0.2W |
Description & Applications | FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE(sat). FEATURE ●High collector current IC(MAX) =600mA ●Low collector to emitter saturation voltage VCE(sat) <0.3Vmax (IC=150mA、IB=15mA) APPLICATION switching application, small type motor drive application. |
描述与应用 | 通用的高电流驱动应用 硅NPN外延型 说明 2SC6046硅NPN外延型晶体管设计 高集电极电流,低VCE(SAT)。 特写 ●高集电极电流 集成电路(MAX) =600毫安 ●低集电极到发射极饱和电压 VCE(sat)的 <0.3Vmax (IC =的150mA,IB=15毫安) 应用 开关应用中,小型电机驱动应用。 |
规格书PDF |