AAT8107IAS-T1 复合场效应管 -20V -6.5A SOIC8/SOP8 marking/标记 GA7 负载开关
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -6.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.046Ω@ VGS =-2.5V, ID=-5.0A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | P-Channel Power MOSFET General Description The AAT8107 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications • Battery Packs • Battery-powered portable equipment |
| 描述与应用 | P沟道功率MOSFET 概述 AAT8107低阈值为20V，双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT8107是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 •电池组 •电池供电的便携式设备 |
| 规格书PDF |
