MJD210-TF PNP三极管 -40V -5A 65MHz 45~180 -750mV/-0.75V TO-252/DPAK marking/标记 MJD210 高直流电流增益
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流ICCollector Current(IC) | -5A |
截止频率fTTranstion Frequency(fT) | 65MHz |
直流电流增益hFEDC Current Gain(hFE) | 45~180 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -750mV/-0.75V |
耗散功率PcPoWer Dissipation | 1.4W |
Description & Applications | PNP epitaxial planar transistor D-PAK for Surface Mount Applications • High DC Current Gain Feature • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications • Straight Lead |
描述与应用 | PNP外延平面晶体管 D-PAK表面贴装应用 •高直流电流增益 特点 •低集电极发射极饱和电压 •铅形成表面贴装应用 •直铅 |
规格书PDF |