BSS192P P沟道MOS场效应管 -240V -150mA 10ohm SOT-89 marking/标记 KC 小信号晶体管
| 最大源漏极电压VdsDrain-Source Voltage | -240V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.15A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 10Ω @-150mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.8V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V |
| 描述与应用 | SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8-2.0 V |
| 规格书PDF |
