2SK1920 N沟道MOSFET 250V 4A TO-252/TP-FA marking/标记 K1920 高速功率/低导通电阻/高速开关/低驱动电流
| 最大源漏极电压Vds Drain-Source Voltage | 250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 500Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-2.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | N-Channel mos silicon FET Very HIGH SPEED SWITCHING APPLICATION Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 | N沟道硅MOS FET 非常高速开关应用 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |
| 规格书PDF |
