2SK3426GSL N沟道MOSFET 20V sot-723 marking/标记 4E 高互导GM/低噪声增益控制放大器电压NV
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | |
| Description & Applications | Features Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone High mutual conductance gm Low noise voltage NV |
| 描述与应用 | 特性 硅N沟道结型场效应管 在低频率的阻抗变换 对于驻极体电容式麦克风 高互导GM 低噪声电压NV |
| 规格书PDF |
