3SK295 N沟道MOSFET 12V 25mA SOT-143/MPAK-4 marking/标记 ZQ 低噪声增益控制放大器/低电压操作
最大源漏极电压Vds Drain-Source Voltage | 12V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 25mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.5-0.5/0-1V |
耗散功率Pd Power Dissipation | 150mW/0.15W |
Description & Applications | Features •Low noise figure. NF = 2.0 dB typ. at f = 900 MHz •Capable of low voltage operation |
描述与应用 | •低噪声系数。 NF= 2.0 dB(典型值)在f =900 MHz的 •能够低电压操作 |
规格书PDF |