SI1303DL-T1 P沟道MOS场效应管 -20V -720mA 0.360ohm SOT-323 marking/标记 LA 功率MOSFET 2.5V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -720mA/-0.72A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.360Ω @-1A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6--1.4V |
| 耗散功率PdPower Dissipation | 340mW/0.34W |
| Description & Applications | FEATURES • TrenchFET Power MOSFETs • 2.5 V Rated |
| 描述与应用 | 功率MOSFET •2.5 V额定 |
| 规格书PDF |
