SI1501DL 复合场效应管 20V/-20V 250mA/-180mA SOT-363/SC70-6 marking/标记 rn
| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V/8V |
| 最大漏极电流IdDrain Current | 250mA/-180mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2Ω@ VGS =4.5V, ID =250mA/3.8Ω@ VGS =-4.5V, ID =-180mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1.5V/-0.4~-1.5V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | Complementary 20-V (D-S) Low-Threshold MOSFET |
| 描述与应用 | 互补的20-V（D-S） 低阈值MOSFET |
| 规格书PDF |
