INK0001AC1 N沟道MOSFET 50V 100mA/0.1A SOT-23/SC-59 marking/标记 K1 极低的RDS/低栅极电荷
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0035Ω/Ohm 100mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.2V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=3.5Ω(TYP) ・High speed switching. ・Small package for easy mounting. |
| 描述与应用 | ·输入阻抗高，并且没有必要 考虑驱动电流。 ·阈值电压低，由低电压的驱动器是可能的。 VTH =0.6〜1.2V ·低导通电阻。罗思=3.5Ω（TYP） ·高速开关。 ·易于安装的小型封装。 |
| 规格书PDF |
