2SJ506STR P沟道MOS场效应管 -30V -10A 0.065ohm SOT-252 marking/标记 J506 高速开关 低驱动电流
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -10A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.065Ω @-5A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | Features • Low on-resistance RDS(on)= 0.065 Ω typ. (at VGS = –10V, ID = 5A) • Low drive current • High speed switching • 4V gate drive devices. |
| 描述与应用 | •低导通电阻 RDS（ON）=0.065Ω（典型值）。 VGS=10V，ID=-5A） •低驱动电流 •高速开关 •4V栅极驱动装置 |
| 规格书PDF |
