2SK1195 N沟道MOSFET 230V 1.5A TO-252/D-PAK marking/标记 K1195 适用于4V驱动/静态的Rds(on)是小/内置ZD门保护
最大源漏极电压Vds Drain-Source Voltage | 230V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 1.5A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.2Ω/Ohm @1.5A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2-4V |
耗散功率Pd Power Dissipation | 10W |
Description & Applications | N-Channel Enhancement type Features N-Channel Enhancement type Applicable to 4V drive The static Rds(on) is small Built-in ZD for Gate Protection |
描述与应用 | N沟道增强型 特性 N沟道增强型 适用于4V驱动 静态的Rds(on)是小 内置ZD门保护 |
规格书PDF |