SI3440DV N沟道MOSFET 150V 1.2A SOT-163/SOT23-6/TSOP-6 marking/标记 AO 低导通电阻/DMOS结构式
| 最大源漏极电压Vds Drain-Source Voltage | 150V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 400mΩ@ VGS =6V, ID =1.4A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2~4V |
| 耗散功率Pd Power Dissipation | 1.14W |
| Description & Applications | N-Channel 50-V (D-S) MOSFET Trench FET Power MOSFET Applications Primary Side Switch for Low Power DC/DC Converters |
| 描述与应用 | 50-V（D-S）N沟道MOSFET 沟槽FET功率MOSFET 应用 低功耗DC / DC转换器的初级侧开关 |
| 规格书PDF |
