NTD80N02T4 N沟道MOSFET 24V 80A TO-252/D-PAK marking/标记 80N02 小功率损耗/低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 24V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 80A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.058Ω/Ohm @80A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 76W |
| Description & Applications | Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. • Power Supplies • Converters • Power Motor Controls • Bridge Circuits |
| 描述与应用 | 功率MOSFET 3.0安培，60伏 N沟道SOT-223 专为低电压，高速开关应用 电源，转换器和功率电机控制桥电路。 功率MOSFET 24 V，80 A，N沟道DPAK 专为低电压，高速开关应用 电源，转换器和功率电机控制桥电路。 •电源供应器 •转换器 •功率电机控制 •桥电路 |
| 规格书PDF |
