RSB6.8G 瞬态抑制二极管TVS/ESD 0.1W/100mW SOD-723/VMD2 标记F7
| 极性Polarization | 双向 Bidirectional |
| 反向关断电压/工作电压VRWMReverse Standoff Voltage | |
| 反向击穿电压VBRBreakdown Voltage | 5.78~7.82V |
| 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation | 10W |
| 峰值脉冲电流IPPmPeak Forward Surge Current | |
| 额定耗散功率PdPower dissipation | 0.1W/100mW |
| Description & Applications | Features • bi Direction ESD Protection Diode (Silicon Epitaxial Planer) • Ultra small mold type (VMD2) • High reliability • Bi chip-mounter, automatic mounting is possible. |
| 描述与应用 | 特点 •双方向ESD保护二极管（硅外延刨床） •超小型模具类型（VMD2） •高可靠性 •双芯片贴片机，自动安装是可能的。 |
| 规格书PDF |
