NTR1P02LT1 P沟道MOS场效应管 -20V -1.3A 0.135ohm SOT-23 marking/标记 P02 高效率 延迟电池寿命
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
最大漏极电流IdDrain Current | -1.3A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.135Ω @-700mA,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.7--1.253 |
耗散功率PdPower Dissipation | 400mW/0.4W |
Description & Applications | Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
描述与应用 | •低的RDS(on) 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用 |
规格书PDF |