FZT649 NPN三极管 35V 3A 150MHz 100~300 600mV/0.6V SOT-223 marking/标记 649 低饱和晶体管
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN Low Saturation Transistor high current gain |
| 描述与应用 | NPN低饱和晶体管 高电流增益 |
| 规格书PDF |
