NZT605 NPN三极管 140V 1.5A 150MHz 500~2000 1V SOT-223 marking/标记 605
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 140V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 110V |
集电极连续输出电流ICCollector Current(IC) | 1.5A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 500~2000 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 1V |
耗散功率PcPower Dissipation | 1W |
Description & Applications | • NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
描述与应用 | •达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
规格书PDF |