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AON2801L 复合场效应管 -20V -3A DFN 2x2 marking/标记 2801 负载开关 PWM应用

价格(不含运费):
起批量(PCS):
¥1.240
≤99
¥1.116
≤499
¥0.930
≤999
¥0.806
≤2999
¥0.744
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产品描述
最大源漏极电压VdsDrain-Source Voltage-20V
最大栅源极电压Vgs(±)Gate-Source Voltage8V
最大漏极电流IdDrain Current-3A
源漏极导通电阻RdsDrain-Source On-State Resistance160mΩ@ VGS = -1.8V,ID = -1.5A
开启电压Vgs(th)Gate-Source Threshold Voltage-0.3~-1V
耗散功率PdPower Dissipation1.5W
Description & ApplicationsDual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -AON2801L is Halogen Free
描述与应用双P沟道增强型场效应晶体管 概述 AON2801/ L,采用先进的沟槽技术,提供出色的RDS(ON),低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 AON2801和AON2801L是电动相同。 符合RoHS标准 AON2801L是无卤
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