EMF21 复合带阻尼三极管 -15V -500mA HEF= 270~680 0.15W SOT-563/EMT6 标记F21 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 | -15V/50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 | -12V/50V |
集电极连续输出电流IC Collector Current(IC) Q1/Q2 | -500mA/100mA |
Q1基极输入电阻R1 Input Resistance(R1) | |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
Q1电阻比(R1/R2) Q1 Resistance Ratio | |
Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) Q1 | 270~680 |
截止频率fT Transtion Frequency(fT) | 260MHz/250MHz |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | Features •Power management (dual transistors) •2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.. •Power switching circuit in a single package. •Mounting cost and area can be cut in half. |
描述与应用 | 特点 •电源管理(双晶体管) •2SA2018和DTC114E被安置独立在EMT6 UMT6包装.. •电源开关电路,在单一封装中。 •安装成本和面积可减少一半 |
规格书PDF |