SI3457CDV-T1-GE3 P沟道MOS场效应管 -30V -4.1A 0.060ohm SOT-163 marking/标记 ATO
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -4.1A/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.060Ω @-4.1A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | FEATURES TrenchFET Power MOSFET |
| 描述与应用 | 功率MOSFET |
| 规格书PDF |
