SI2302ADS-T1-E3 N沟道MOSFET 20V 2.4A SOT-23/SC-59 marking/标记 2A 低导通电阻/高速开关/宽SOA
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 2.4A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.115Ω/Ohm @3.1A,2.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.65-1.2V |
耗散功率Pd Power Dissipation | 900mW/0.9W |
Description & Applications | N-Channel 1.25-W, 2.5-V MOSFET |
描述与应用 | N沟道1.25-W, 2.5 V MOSFET |
规格书PDF |