2SK3857TK-B N沟道结型场效应管 20v 0.14~0.35mA SOT-523 marking/标记 9B 超紧凑ECM
| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.14~0.35ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~-1v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type Application for Ultra-compact ECM |
| 描述与应用 | •场效应晶体管的硅N沟道结型 超紧凑ECM应用 |
| 规格书PDF |
