SI2303CDS P沟道MOS场效应管 -30V -2.7A 0.156ohm SOT-23 marking/标记 N3
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -2.7A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.156Ω @-1.9A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1--3.0V |
耗散功率PdPower Dissipation | 2.3W |
Description & Applications | FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
描述与应用 | Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
规格书PDF |