2SB1599GRL PNP三极管 -50V -3A 150MHz 100~220 -1000mV/-1V SOT-89/SC-62 marking/标记 1XR 功率放大
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流ICCollector Current(IC) | -3A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 100~220 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率PcPoWer Dissipation | 1W |
Description & Applications | PNP Silicon epitaxial planar transistor For power amplification Complementary to 2SD2457 Features Low collector to emitter saturation voltage VCE(sat) Mini Power type package |
描述与应用 | PNP硅外延平面晶体管 对于功率放大 补充型2SD2457 特点 低集电极到发射极饱和电压VCE(SAT) 迷你功率型封装 |
规格书PDF |