SI4800BDY-T1-E3 N沟道MOSFET 30v 9A 8-SOIC marking/标记 4800B 低导通电阻/低电压驱动
| 最大源漏极电压Vds Drain-Source Voltage | 30v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 25v |
| 最大漏极电流Id Drain Current | 9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0185Ω/Ohm @9A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.8V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | N-Channel Reduced Qg Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested |
| 描述与应用 | N沟道减少QG 快速开关MOSFET •根据IEC 61249-2-21的无卤素可用的 •的TrenchFET 功率MOSFET •高效率的PWM优化 •100％的研究所和Rg测试 |
| 规格书PDF |
