RRQ045P03 P沟道MOS场效应管 -30V -4.5A 53毫欧 SOT-153 marking/标记 UB 低导通电阻 高功率封装 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -4.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 53mΩ@ VGS = -4V, ID = -2.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1~-2.5V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | 4V Drive Pch MOSFET Features 1) Low On-resistance. 2) High Power Package. 3) High speed switching. Application Switching |
| 描述与应用 | 4V驱动P沟道MOSFET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 应用 开关 |
| 规格书PDF |
