S595TRW-GS08 N沟道MOSFET 8V 30mA SOT-143 marking/标记 W59
最大源漏极电压Vds Drain-Source Voltage | 8V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
最大漏极电流Id Drain Current | 30mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | 7-10V |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Features • Integrated gate protection d iodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC |
描述与应用 | MOSMIC®电视调谐器预安排5 V电源电压 MOSMIC - MOS单片集成电路 •集成的栅极保护二极管 •低噪声系数 •高增益 •偏置片上网络 •改进的交叉调制增益降低 •高AGC-范围 •SMD封装 •铅(Pb)免费组件 |
规格书PDF |