BCW32LT1 NPN三极管 32V 100mA/0.1A 100MHz 200~450 250mV/0.25V SOT-23/SC-59 marking/标记 D2
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 32V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
截止频率fTTranstion Frequency(fT) | 100MHz |
直流电流增益hFEDC Current Gain(hFE) | 200~450 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率PcPower Dissipation | 300mW/0.3W |
Description & Applications | General Purpose Transistors NPN Silicon Features • Pb−Free Package is Available |
描述与应用 | 通用晶体管NPN硅 |
规格书PDF |