STS3401 P沟道MOS场效应管 -30V -3A 0.075ohm SOT-23 marking/标记 T01 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.075Ω @-3A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--2.5V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT -23 P ackage. |
| 描述与应用 | ŞUPER高密度电池设计低R D（ON）。 ŗugged可靠。 S OT-23包装 |
| 规格书PDF |
