PMBF4393 N沟道结型场效应管 40v 5~30mA SOT-23 marking/标记 W6G 低功耗斩波器或开关
| 最大源漏极电压VdsDrain-Source Voltage | 40v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -40v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 5~30ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.5~-3v |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | •N-channel DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. |
| 描述与应用 | •N沟道 说明 对称硅n沟道 耗尽型结型场效应 塑料超小型晶体管 信封用于应用 厚薄膜电路。该 晶体管用于低功耗 斩波器或开关应用 业。 |
| 规格书PDF |
